The surface of the substrate is etched to form a cone shape and improve reflectivity. In addition, by forming an AlN Buffer layer, uniform crystal growth and a smooth surface can be achieved.
The EPI layer is formed by MOCVD and the transparent electric film (ITO) is formed by sputtering.
When processing ITO films, particle control is very important.
When the ITO film is formed by sputtering, negative ions accelerated in the electric field near the TG surface are incident on the substrate at a high speed, causing damage to the ITO film on the substrate. LVS is a method of lowering the sputtering voltage (negative ion acceleration electric field) and forming an ITO film in a low-damage manner.
The surface of the substrate is etched to form a cone shape to improve the light reflection efficiency.
3. Etching (ITO processing)
The 8 inch displays might be affected and delay for an accident.
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